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| AP6923O Advanced Power Electronics Corp. Low On-Resistance Fast Switching Characteristic Included Schottky Diode A K A A P-CHANNEL WITH SCHOTTKY DIODE POWER MOSFET BVDSS RDS(ON) S G S D -20V 50m -3.5A TSSOP-8 ID Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. D A G S K Absolute Maximum Ratings Symbol VDS VKA VGS ID@TA=25 ID@TA=70 IDM IF IFM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage (MOSFET and Schottky)) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) Continuous Drain Current (MOSFET) Continuous Drain Current (MOSFET) Pulsed Drain Current (MOSFET) Average Forward Current (Schottky) Pulsed Forward Current (Schottky) Total Power Dissipation (MOSFET) Total Power Dissipation (Schottky) Storage Temperature Range Operating Junction Temperature Range 1 1 3 3 Rating -20 20 12 - 3.5 - 2.8 - 30 1 25 1 1 -55 to 150 -55 to 125 Units V V V A A A A A W W Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient (MOSFET) Thermal Resistance Junction-ambient 3 (Schottky) 3 Value Max. Max. 125 125 Unit /W /W Data and specifications subject to change without notice 200131025 AP6923O Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=-250uA Min. -20 -0.5 - Typ. 0.03 10 15.6 2.1 5.2 8.2 9.4 66.4 48 660 285 130 Max. Units 50 85 1 25 100 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=-1mA RDS(ON) Static Drain-Source On-Resistance VGS=-4.5V, ID=-3.5A VGS=-2.5V, ID=-2.7A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70oC) o VDS=VGS, ID=-250uA VDS=-10V, ID=-3.5A VDS=-20V, VGS=0V VDS=-16V ,VGS=0V VGS= 12V ID= -3.5A VDS= -10V VGS= -4.5V VDS= -10V ID= -1A RG= 3.3,VGS= -4.5V RD= 10 VGS=0V VDS=-20V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol IS VSD Parameter Continuous Source Current ( Body Diode ) Test Conditions VD=VG=0V , VS=-1.2V IS=-0.83A, VGS=0V Min. - Typ. - Max. Units -0.83 -1.2 A V Forward On Voltage 2 Schottky Characteristics@Tj=25 Symbol VF Irm Parameter Forward Voltage Drop Maximum Reverse Leakage Current Test Conditions IF=1A Vr=20V Min. - Typ. - Max. Units 0.5 100 V uA Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 208/W when mounted on Min. copper pad. AP6923O MOSFET 32 24 T A =25 C -ID , Drain Current (A) 24 o -4.5V -4.0V -3.5V 18 T A =150 C o -3.0V 16 -ID , Drain Current (A) -4.5V -4.0V -3.5V -3.0V 12 -2.5V -2.5V 8 6 V G = - 2.0V V G =-2.0V 0 0 1 2 3 4 0 0 1 2 3 4 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 180 1.6 I D = -3.5A 140 I D =-3.5A V G =-4.5V 1.3 T A =25 o C Normalized RDS(ON) RDS(ON) (m ) 100 1.0 60 0.7 20 1 2 3 4 5 6 0.4 -50 0 50 100 150 -V GS (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.2 10 1 0.9 -IS (A) T j =150 o C 0.1 T j =25 o C -VGS(th) (V) 0.6 0.3 1.2 -50 0.01 0 0.4 0.8 0 50 100 150 -V SD (V) T j , Junction Temperature ( C) o Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP6923O 15 1000 f=1.0MHz I D =-3.5A -VGS , Gate to Source Voltage (V) 12 C iss V DS =-10V V DS =-15V V DS =-20V 9 C (pF) C oss 6 3 C rss 0 0 4 8 12 16 20 100 1 5 9 13 17 21 25 Q G , Total Gate Charge (nC) -V DS (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Duty Factor=0.5 Normalized Thermal Response (Rthja) 100us 10 0.2 0.1 1ms -ID (A) 10ms 100ms 0.1 0.1 0.05 1 0.02 0.01 PDM 0.01 t 1s T A =25 C Single Pulse o Single Pulse T Duty Factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=208 oC/W DC 0.01 0.1 1 10 100 0.001 0.0001 0.001 0.01 0.1 1 10 100 -V DS (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance SCHOTTKY DIODE 10000 10 Irm- Reverse Leakage Current (uA) IF - Forward Current (A) 1000 T j = 1 25 o C 1 V KA = 20V V KA =10V o T j = 25 C 100 0.1 10 1 25 50 75 100 125 0.01 0 0.2 0.4 0.6 0.8 Junction Temperature ( C ) o V F - Forward Voltage Drop (V) Fig 1. Reverse Leakage Current v.s. Junction Temperature Fig 2. Forward Voltage Drop |
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